document number: 91401 www.vishay.com s10-0811-rev. a, 12-apr-10 1 power mosfet sihp16n50c, SIHB16N50C, sihf16n50c vishay siliconix features ? low figure-of-merit r on x q g ? 100 % avalanche tested ? gate charge improved ?t rr /q rr improved ? compliant to rohs directive 2002/95/ec notes a. limited by maximum junction temperature. b. v dd = 50 v, starting t j = 25 c, l = 2.5 mh, r g = 25 , i as = 16 a. c. repetitive rating; puls e width limited by maximum junction temperature. d. 1.6 mm from case. product summary v ds (v) at t j max. 560 v r ds(on) ( )v gs = 10 v 0.38 q g (max.) (nc) 68 q gs (nc) 17.6 q gd (nc) 21.8 configuration single n-channel mosfet g d s to-220ab g d s s d g to-220 fullpak d 2 pak (to-263) g d s ordering information package to-220ab d 2 pak (to-263) to-220 fullpak lead (pb)-free sihp16n50c-e3 SIHB16N50C-e3 sihf16n50c-e3 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit to220-ab d 2 pak (to-26 3 ) to-220 fullpak drain-source voltage v ds 500 v gate-source voltage v gs 30 continuous dr ain current (t j = 150 c) a v gs at 10 v t c = 25 c i d 16 a t c = 100 c 10 pulsed drain current c i dm 40 linear derating factor 2w/c single pulse avalanche energy b e as 320 mj maximum power dissipation p d 250 38 w operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (peak temperature) d for 10 s 300 * pb containing terminations are not rohs compliant, exemptions may apply www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com document number: 91401 2 s10-0811-rev. a, 12-apr-10 sihp16n50c, SIHB16N50C, sihf16n50c vishay siliconix note a. when mounted on 1" square pcb (fr-4 or g-10 material). note ? the information shown here is a preliminary product proposal, not a commercial product data sheet. vishay siliconix is not com mitted to produce this or any similar product. this information should not be used for design purposes, no r construed as an offer to furn ish or sell such products. thermal resistance ratings parameter symbol to220-ab d 2 pak (to-26 3 ) to-220 fullpak unit maximum junction-to-ambient r thja 62 65 c/w maximum junction-to-case (drain) r thjc 0.5 3.3 junction-to-ambient (pcb mount) a r thja 40 - specifications t j = 25 c, unless otherwise noted parameter symbol test co nditions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 500 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 0.6 - v/c gate-source threshold voltage (n) v gs(th) v ds = v gs , i d = 250 a 3.0 - 5.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 500 v, v gs = 0 v - - 50 a v ds = 400 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 8 a - 0.31 0.38 forward transconductance a g fs v ds = 50 v, i d = 3 a - 3 - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz - 1900 - pf output capacitance c oss - 230 - reverse transfer capacitance c rss -24- total gate charge q g v gs = 10 v i d = 16 a, v ds = 400 v -4568 nc gate-source charge q gs -18- gate-drain charge q gd -22- turn-on delay time t d(on) v dd = 250 v, i d = 16 a, r g = 9.1 , v gs = 10 v -27- ns rise time t r - 156 - turn-off delay time t d(off) -29- fall time t f -31- gate input resistance r g f = 1 mhz, open drain - 1.6 - drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --16 a pulsed diode forward current i sm --30 body diode voltage v sd t j = 25 c, i s = 10 a, v gs = 0 v - - 1.8 v body diode reverse recovery time t rr t j = 25 c, i f = i s , di/dt = 100 a/s, v r = 20 v - 555 - ns body diode reverse recovery charge q rr -5.5-c body diode reverse recovery current i rrm -18- a s d g www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91401 www.vishay.com s10-0811-rev. a, 12-apr-10 3 sihp16n50c, SIHB16N50C, sihf16n50c vishay siliconix typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics (to-220) fig. 2 - typical output characteristics (to-220) fig. 3 - typical transfer characteristics fig. 4 - normalized on-r esistance vs. temperature v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 t j = 25 c v gs top 15 v 14 v 13 v 12 v 11 v 10 v 9.0 v 8.0 v 7.0 v 6.0 v bottom 5.0 v 7.0 v 35 40 45 50 v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 t j = 150 c v gs top 15 v 14 v 13 v 12 v 11 v 10 v 9.0 v 8.0 v 7.0 v 6.0 v bottom 5.0 v 7.0 v v gs , gate-to-source voltage (v) i d , drain-to-source current (a) 0246810 0 5 10 15 20 25 30 t j = 150 c t j = 25 c 35 40 45 12 20 18 16 14 t j , junction temperature (c) r ds(on) , drain-to-source on-resistance (normalized) 0 0.5 1 1.5 2 2.5 3 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 i d = 16 a v gs = 10 v www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com document number: 91401 4 s10-0811-rev. a, 12-apr-10 sihp16n50c, SIHB16N50C, sihf16n50c vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area (to-220ab, d 2 pak) fig. 9 - maximum safe oper ating area (to-220 fullpak) v ds , drain-to-source voltage (v) c, capacitance (pf) 1 10 100 1000 2400 2000 1600 1200 800 400 0 v gs = 0 v, f = 1mhz c iss = c gs +c gd c ds shorted c rss = c gd c oss = c ds + c gd c oss c iss c rss 2800 q g , total gate charge (nc) v gs , gate-to-source voltage (v) 0 20406080 0 4 8 12 16 20 24 i d = 16 a v ds = 400 v v ds = 250 v v ds = 100 v 0.1 1 10 100 v sd , source-to-drain voltage (v) i sd , reverse drain current (a) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v gs = 0 v t j = 25 c t j = 150 c 0.1 1 10 100 v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 10 100 1000 1 ms 10 ms t c = 25 c t j = 150 c single pulse t c = 25 c t j = 150 c single pulse t c = 25 c t j = 150 c single pulse t c = 25 c t j = 150 c single pulse 100 s operation in this area limited by r ds(on) 0.1 1 10 100 v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 10 100 1000 100 s t c = 25 c t j = 150 c single pulse 10 ms 1 ms operation in this area limited by r ds(on) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91401 www.vishay.com s10-0811-rev. a, 12-apr-10 5 sihp16n50c, SIHB16N50C, sihf16n50c vishay siliconix fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient therma l impedance, junction-to-case (to-220ab, d 2 pak) fig. 12 - maximum effective transient thermal impedance, junction-to-case (to-220 fullpak) pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 1 0.1 0.01 10 -4 10 -3 10 -2 0.1 1 t 1 , rectangular pulse duration (s) thermal response (z thjc ) single pulse (thermal response) 0.02 0.05 0.1 0.5 0.2 p dm t 1 t 2 notes: 1. duty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 1 0.1 0.01 10 -4 10 -3 10 -2 0.1 1 10 t 1 , rectangular pulse duration (s) thermal response (z thjc ) single pulse (thermal response) 0.02 0.05 0.5 0.2 0.1 p dm t 1 t 2 notes: 1. duty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com document number: 91401 6 s10-0811-rev. a, 12-apr-10 sihp16n50c, SIHB16N50C, sihf16n50c vishay siliconix fig. 1 3 a - unclamped inductive test circuit fig. 1 3 b - unclamped inductive waveforms fig. 14a - basic ga te charge waveform fig. 14b - gate charge test circuit a r g i as 0.01 t p d.u.t. l v ds + - v dd driver a 15 v 20 v t p v ds i as q gs q gd q g v g charge v gs d.u.t. v ds i d i g 3 ma v gs 0.3 f 50 k 0.2 f 12 v current regulator same type as d.u.t. current sampling resistors + - www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91401 www.vishay.com s10-0811-rev. a, 12-apr-10 7 sihp16n50c, SIHB16N50C, sihf16n50c vishay siliconix fig. 15 - for n-channel vishay siliconix maintains worldw ide manufacturing capability. prod ucts may be manufactured at on e of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents su ch as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91401 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs = 10 v* v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor current d = p. w . period + - + + + - - - * v gs = 5 v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t. circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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